High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Kazemian, P ^a   Mentink, S A M ^b   Rodenburg, C ^c   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRON GUNS; IMAGING TECHNIQUES; OPTICAL RESOLVING POWER; SCANNING ELECTRON MICROSCOPY; SILICON;

DOPANT CONCENTRATIONS; ENERGY FILTERING; ENERGY-FILTERED IMAGES; SPATIAL RESOLUTION;

SEMICONDUCTOR DOPING;

EID: 33748850134     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335980     Document Type: Article

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