Chemical mechanical planarization: Slurry chemistry, materials, and mechanisms

Chemical Reviews

Volumn 110, Issue 1, 2010, Pages 178-204

  Krishnan, Mahadevaiyer ^a   Nalaskowski, Jakub W ^a   Cook, Lee M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Dow Electronic Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVE ACTION; CHEMICAL MECHANICAL PLANARIZATIONS; CHEMICAL-MECHANICAL PLANARIZATION; CMP PROCESS; CRITICAL PROPERTIES; PLANAR SURFACE; POLISH RATE; POLY(ACRYLIC ACID ); POST-CMP CLEANING; PREFERENTIAL ADSORPTION; PROCESS TECHNOLOGIES; SILICA SLURRIES; SLURRY CHEMISTRY;

ADSORPTION; CARBOXYLIC ACIDS; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; MATERIALS; METAL RECOVERY; MICROELECTRONICS; ORGANIC ACIDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON NITRIDE;

NANOTECHNOLOGY;

EID: 75649125599     PISSN: 00092665     EISSN: 15206890     Source Type: Journal    
DOI: 10.1021/cr900170z     Document Type: Article

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