Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6371-6379

  Philipossian, Ara ^a   Olsen, Scott ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

Chemical mechanical planarization (CMP); Coefficient of friction (COF); Removal rate; Tribological mechanism

Indexed keywords

ABRASIVES; DIELECTRIC MATERIALS; FRICTION; KINEMATICS; LUBRICATION; MATHEMATICAL MODELS; SILICON WAFERS; THIN FILMS; TRIBOLOGY; VISCOSITY;

CHEMICAL MECHANICAL PLANARIZATION (CMP); SHEAR FORCES;

CHEMICAL MECHANICAL POLISHING;

EID: 0346959661     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6371     Document Type: Article

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