Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Journal of Crystal Growth

Volumn 312, Issue 4, 2010, Pages 532-541

  Hartmann, J M ^a   Abbadie, A ^a   Barnes, J P ^a   Fedeli J M ^a   Billon, T ^a   Vivien, L ^b  

^a CEA LETI   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

A1. Diffusion; A1. Stresses; A1. Surface structure; A1. Volume defects; A3. Chemical vapor deposition processes; B2. Semiconducting germanium

Indexed keywords

A1. DIFFUSION; A1. STRESSES; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING GERMANIUM; CHEMICAL VAPOR DEPOSITION PROCESS; VOLUME DEFECTS;

ABSORPTION; CHEMICAL VAPOR DEPOSITION; LIGHT ABSORPTION; OPTICAL PROPERTIES; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; SURFACE ROUGHNESS;

SURFACE STRUCTURE;

EID: 74549190110     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.056     Document Type: Article

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