Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500 °c and from Si3 H8 at 350 °c due to segregation of Ge

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Valev, V K ^a   Leys, F E ^b   Caymax, M ^b   Verbiest, T ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; HARMONIC GENERATION; NONLINEAR OPTICS; SEGREGATION (METALLOGRAPHY); SILICON;

EXPERIMENTAL TECHNIQUES; GE(100); NON-LINEAR OPTICAL RESPONSE; NONLINEAR SUSCEPTIBILITIES; SECOND-HARMONIC GENERATIONS; SI/GE; SIGNAL AMPLITUDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60349107589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082092     Document Type: Article

References (10)

1. D. P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F. E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P. W. Mertens, M. Meuris, and M. M. Heynsa, J. Electrochem. Soc. 0013-4651 10.1149/1.2919115 155, H552 (2008).
2. G. Lüpke, Surf. Sci. Rep. 0167-5729 10.1016/S0167-5729(99)00007-2 35, 75 (1999).
3. J. F. McGilp, Prog. Surf. Sci. 0079-6816 10.1016/0079-6816(95)00034-V 49, 1 (1995); D. L. Mills, Nonlinear Optics Basic Concepts, 2nd ed. (Springer, New York, 1998), p. 160.
4. J. E. Sipe, V. Mizrahi, and G. I. Stegeman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.9091 35, 9091 (1987).
5. S. T. Cundiff, W. H. Knox, F. H. Baumann, K. W. Evans-Lutterodt, M. -T. Tang, M. L. Green, and H. M. van Driel, Appl. Phys. Lett. 0003-6951 10.1063/1.118592 70, 1414 (1997).
6. G. Lüpke, D. J. Bottomley, and H. M. van Driel, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.10389 47, 10389 (1993).
7. G. Lüpke, C. Meyer, U. Emmerichs, F. Wolter, and H. Kurz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.17292 50, 17292 (1994).
8. J. Bloch, J. G. Mihaychuk, and H. M. van Driel, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.920 77, 920 (1996).
9. J. -W. Jeong, S. -C. Shin, N. N. Dadoenkova, I. L. Lyubchanskii, V. K. Valev, and Th. Rasing, Appl. Phys. Lett. 0003-6951 10.1063/1.2433756 90, 044108 (2007).
10. F. E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, B. De Jaeger, J. Van Steenbergen, K. Martens, D. Hellin, J. Rip, G. Dilliway, A. Delabie, P. Zimmerman, M. Houssa, A. Theuwis, R. Loo, M. Meuris, M. Caymax, and M. M. Heyns, Mater. Sci. Semicond. Process. 1369-8001 10.1016/j.mssp.2006.08.034 9, 679 (2006).