Stranski-Krastanow growth of tensile strained Si islands on Ge (001)

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Pachinger, D ^a   Groiss, H ^a   Lichtenberger, H ^a   Stangl, J ^a   Hesser, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; EPILAYERS; GROWTH TEMPERATURE; SILICON; TENSILE STRAIN; WETTING;

STRANSKI-KRASTANOW GROWTH; TENSILE STRAINED SILICON; TRUNCATED PYRAMIDS;

GERMANIUM;

EID: 36849016805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2820605     Document Type: Article

References (24)

1. Review in C. Teichert, Phys. Rep. 365, 335 (2002), and references therein.
2. I. N. Stranski and V. L. Krastanow, Sitzungsber. Akad. Wiss. Wien, Math.-Naturwiss. Kl., Abt. 2B 146, 797 (1938).
3. Review in F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).
4. A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin, and A. M. Raitsimring, Phys. Rev. B 68, 193207 (2003).
5. A. M. Tyryshkin, S. A. Lyon, W. Jantsch, and F. Schäffler, Phys. Rev. Lett. 94, 126802 (2005).
6. L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, M. Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charlie Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, and P. M. Mooney, Appl. Phys. Lett. 84, 4047 (2004).
7. T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler, and F. Schäffler, Appl. Phys. Lett. 88, 162112 (2006).
8. G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, Phys. Rev. B 74, 035302 (2006).
9. Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, Phys. Rev. Lett. 98, 176102 (2007).
10. Y. H. Xie, G. H. Glimer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin, Phys. Rev. Lett. 73, 3006 (1994).
11. J. Tersoff, Phys. Rev. Lett. 74, 4962 (1995).
12. G. Springholz, M. Pinczolits, P. Mayer, V. Holy, G. Bauer, H. H. Kang, and L. Salamanca-Riba, Phys. Rev. Lett. 84, 4669 (2000).
13. H. Okumura, T. Akane, and S. Matsumoto, Appl. Surf. Sci. 125, 125 (1998).
14. U. Denker, O. G. Schmidt, N.-Y. Jin-Philipp, and K. Eberl, Appl. Phys. Lett. 78, 3723 (2001).
15. G.-H. Lu, M. Cuma, and F. Liu, Phys. Rev. B 72, 125415 (2005).
16. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
17. N. Hirashita, N. Sugiyama, E. Toyoda, and S. Takagi, Appl. Phys. Lett. 86, 221923 (2005).
18. S. Y. Shiryaev, F. Jensen, J. L. Hansen, J. W. Petersen, and A. N. Larsen, Phys. Rev. Lett. 78, 503 (1997).
19. C. Teichert, C. Hofer, K. Lyutovich, M. Bauer, and E. Kasper, Thin Solid Films 380, 25 (2000).
20. M. A. Lutz, R. M. Feenstra, P. M. Mooney, J. Tersoff, and J. O. Chu, Surf. Sci. 316, L1075 (1994).
21. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Phys. Rev. B 64, 235318 (2001).
22. S. J. Chey and D. G. Cahill, in Dynamics of Crystal Surfaces and Interfaces (Fundamental Materials Research), P. M. Duxbury, and, T. J. Pence, (Plenum, New York, 1997), pp. 59-70.
23. L. Huang, F. Liu, G.-H. Lu, and X. G. Gong, Phys. Rev. Lett. 96, 016103 (2006).
24. Y. Tu and J. Tersoff, Phys. Rev. Lett. 93, 216101 (2004).