Impact of dislocation densities on n +/p and p +/n junction GaAs diodes and solar cells on SiGe virtual substrates

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Andre, C L ^a   Wilt, D M ^b   Pitera, A J ^c   Lee, M L ^c   Fitzgerald, E A ^c   Ringel, S A ^a,d  

^a Ohio State University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d 205 Dreese Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MODELS; LATTICE-MISMATCHED SUBSTRATES; MINORITY-CARRIER MOBILITY; THREADING DISLOCATION DENSITIES (TDD);

CARRIER CONCENTRATION; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SOLAR CELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 22944465755     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1946194     Document Type: Article

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