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Volumn 71, Issue 24, 1997, Pages 3510-3512

Growth of strain-relaxed Ge films on Si(001) surfaces

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Indexed keywords


EID: 0000229168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120375     Document Type: Article
Times cited : (71)

References (22)
  • 6
    • 36549092192 scopus 로고
    • B. S. Meyerson, K. J. Uram, and F. K. LeGoues, Appl. Phys. Lett. 53, 2555 (1988); E. A. Fitzgerald, Y. H. Xie, M. L. Green, D. Brasen, and A. R. Kortan, Y. J. Mill, J. Michel, and B. W. Weir, ibid. 59, 811 (1991).
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 2555
    • Meyerson, B.S.1    Uram, K.J.2    LeGoues, F.K.3
  • 14
    • 85033325795 scopus 로고    scopus 로고
    • note
    • Thickness of the cap layer was checked by cross-sectional HRTEM for a sample that had a sandwich structure of Ge/SiGe cap-layer/Ge on the Si substrate.
  • 18
    • 85033316669 scopus 로고    scopus 로고
    • note
    • An interface between the cap layer and the Ge film underneath could not be clearly observed because of unintentional oxidation of the film surface during TEM sample preparation.
  • 20
    • 0000292256 scopus 로고
    • F. K. LeGoues, M. Copel, and R. Tromp, Phys. Rev. Lett. 63, 1826 (1989); A. Sakai and T. Tatsumi, ibid. 71, 4007 (1993).
    • (1993) Phys. Rev. Lett. , vol.71 , pp. 4007
    • Sakai, A.1    Tatsumi, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.