Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1115-1119

  Lubyshev, D ^a   Fastenau, J M ^a   Wu, Y ^a   Liu, W K ^a   Bulsara, M T ^b   Fitzgerald, E A ^b   Hoke, W E ^c  

^a IQE INC   (United States)

^b USA   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE BOUNDARIES; COMPOSITE METAMORPHIC BUFFERS; METAMORPHIC HETEROJUNCTION BIPOLAR TRANSISTORS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

ELECTRON MOBILITY; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTIMIZATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 44649086329     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2884749     Document Type: Article

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