SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 472-476

SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions

(3) Holliger, P a Laugier, F a Dupuy, J C b

a CEA LETI (France)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

Depth resolution; MCs2+ technique; N type silicon; SIMS; Ultrashallow junction

Indexed keywords

ARSENIC; CMOS INTEGRATED CIRCUITS; GERMANIUM; IONS; MICROSCOPES; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

DEPTH RESOLUTION; MICHELSON INTERFERENCE MICROSCOPE; SEMICONDUCTOR DEPTH PROFILING; ULTRASHALLOW IMPLANT;

SEMICONDUCTOR JUNCTIONS;

EID: 0036692805 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1341 Document Type: Conference Paper

Times cited : (55)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.