Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structures

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 850-857

  Abbadie, A ^a   Allibert, F ^a   Brunier, F ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Characterization; Defects; Preferential etching; Silicon germanium

Indexed keywords

CHEMICAL SOLUTIONS; CHROMIUM-FREE; CRYSTALLINE QUALITY; DEFECT ETCHING; DEFECT-SELECTIVE ETCHING; ENGINEERED-SUBSTRATE; ETCHING SOLUTIONS; ETCHING TECHNIQUE; GE ON INSULATORS; INSULATOR STRUCTURE; OXIDIZING AGENTS; PHYSICAL CHARACTERIZATION; PREFERENTIAL ETCHING; PSEUDO-MOSFET; SELECTIVE ETCHING; SILICON-GERMANIUM; SILICON-ON-INSULATOR; STARTING MATERIALS; STRAINED SILICON-ON-INSULATOR;

BICMOS TECHNOLOGY; BROMINE; BROMINE COMPOUNDS; CHEMICAL COMPOUNDS; CHROMIUM; DEFECTS; GERMANIUM; HYDROCHLORIC ACID; IODINE; IODINE COMPOUNDS; MICROSENSORS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS;

ETCHING;

EID: 67649210212     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.033     Document Type: Article

References (60)

1. Ghyselen B., Hartmann J.M., Ernst T., Aulnette C., Osternaud B., Bogumilowicz Y., et al. Solid State Electron 48 (2004) 1285
2. Letertre F., Deguet C., Richtarch C., Faure B., Hartmann J.M., Chieu F., et al. Mat Res Soc Symp Proc B4.4.1 (2004) 809
3. Cayrefourcq I., Kennard M., Metral F., Mazuré C., Thean A., Sadaka M., et al. In: Celler G., Cristoloveanu S., Gamiz F., Fossum J.G., and Izumi K. (Eds). Silicon-on-insulator technology and devices XII, ECS proc, vol. 2005-03 (2005), The Electrochemical Society, Pennington, NJ, USA 191-206
4. Akatsu T., Hartmann J.M., Abbadie A., Aulnette C., Le Vaillant Y.M., Rouchon D., et al. ECS Trans 3 6 (2006) 107
5. Rozgonyi G.A. Encyclopedia of materials: science and technology. In: Mahajan S. (Ed) (2001), Elsevier Science Ltd., Amsterdam 8524
6. Kolbesen B., Maelisse J., and Possner D. ECS Trans 11 3 (2007) 195
7. Mähliß J., Abbadie A., and Kolbesen B.O. ECS Trans 6 4 (2007) 271
8. Abbadie A., Hartmann J.M., Deguet C., Sanchez L., Brunier F., and Letertre F. ECS Trans 6 4 (2007) 263
9. Abbadie A., Hartmann J.M., and Brunier F. ECS Trans 10 1 (2007) 3
10. Inoue N et al. In: Proc 4th int symp on adv sci and technol of Si materials. Kona, Hawai; 2004. p. 123.
11. Virtuani A., Marchionna S., Acciarri M., Isella G., and Von Kaenel H. Mat Sci Semicond Proc 9 (2006) 798
12. Sugimoto H., and Tajima M. Jpn J Appl Phys 46 (2007) L339
13. Parsons J., Parker E.H.C., Leadley D.R., Grasby T.J., and Capewell A.D. Appl Phys Lett 91 (2007) 063127
14. Hirashita N., Moriyama Y., Toyoda E., Sugiyama N., and Takagi S.I. IEEE, ISTDM (2006) 206
15. Olsen S.H., O'Neill A.G., Dobrosz P., Bull S.J., Driscoll L.S., Chattopadhyay S., et al. J Appl Phys 97 (2005) 114504
16. Hartmann J.M., Damlencourt J.F., Bogumilowicz Y., Holliger P., Rolland G., and Billon T. J Cryst Growth 274 (2005) 90
17. Sirtl, and Adler. Z Metallkd 52 (1961) 529
18. Jenkins W. J Electrochem Soc 124 (1977) 757
19. Secco d'Aragona F. J Electrochem Soc 119 (1972) 948
20. Schimmel D.G. J Electrochem Soc 126 (1979) 479
21. Dash W.C. J Appl Phys 27 (1956) 1193
22. Chandler T.C. J Electrochem Soc 137 (1990) 944
23. Bedell S.W., Chen H., Sadana D.K., Fogel K., and Domenicucci A. Electrochem Solid State Lett 7 (2004) G105
24. Possner D., Kolbesen B.O., Klüppel V., and Cerva H. ECS Trans 10 1 (2007) 21
25. Souriau L, Terzieva V, Meuris M, Caymax M, In: 8th Int symp on ultra clean processing of semicond surf solid state phenom, vol. 134; 2006. p. 83.
26. Chang G.K., Carns T.K., Rhee S.S., and Wang K.L. J Electrochem Soc 138 (1991) 202
27. Carns T.K., Tanner M.O., and Wang K.L. J Electrochem Soc 142 (1995) 1260
28. Meltzer S., and Mandler D. J Chem Soc Faraday Trans 91 6 (1995) 1019
29. Zhou X., Ihida M., Imanishi A., and Nakato Y. Electrochem Acta 45 (2000) 4655
30. Bogumilowicz Y., Hartmann J.M., Truche R., Campidelli Y., Rolland G., and Billon T. Semicond Sci Technol 20 (2005) 127
31. Abbadie A., Bedell S.W., Hartmann J.M., Sadana D.K., Brunier F., Figuet C., et al. J Electrochem Soc 154 (2007) H713
32. Kittler M., Ulhaq-Bouillet C., Hersener J., and Schaeffler F. Solid State Phenom 32 (1993) 559
33. Higgs V., and Kittler M. Inst Phys Conf Ser 146 (1995) 723
34. Bray K.R., Zhao W., Kordas L., Robinson McD., and Rozgonyi G. J Electrochem Soc 152 (2005) C310
35. Holý V, Pietsch U, Baumbach T. High resolution X-ray scattering from thin films and multilayers. Springer Tract in Modern Physics, vol. 149; 1999.
36. Ayers J.E. J Cryst Growth 135 (1994) 71
37. Gay P., Hirsch P.B., and Kelly A. Acta Metall 1 (1953) 315
38. Kaganer V.M., Kohler R., Schmidbauer M., Opitz R., and Jenichen B. Phys Rev B 55 (1997) 1793
39. Holy V., Li J.H., Bauer G., Schaffler F., and Herzog H.J. J Appl Phys 78 8 (1995) 5013
40. Zhang X.G., Li P., Parent D.W., and Zhao G. J Electron Mater (1999)
41. Erdtmann M., and Langdo T.A. J Mat Sci: Mater Electron 17 (2006) 137
42. Hirashita N., Moriyama Y., Toyoda E., Sugiyama N., and Tagaki S.I. Proc ISTDM, IEEE (2006) 206
43. Mitani T., Nakashima S., Okumara H., and Ogura A. J Appl Phys 100 (2006) 073511
44. Tsang J.C., Mooney P.M., Dacol F., and Chu J.O. J Appl Phys 75 (1994) 8098
45. Freund L.B., and Suresh S. Thin films materials (2003), Cambridge University Press, New York
46. Kimura Y., Sugii N., Kimura S., Inui K., and Hirasawa W. Appl Phys Lett 88 (2006) 031912
47. Hartmann J.M., Abbadie A., Rouchon D., Barnes J.P., Mermoux M., and Billon T. Thin Solid Films 516 (2007) 4238
48. Samavedam S., Taylor W.J., Grant J.M., Smith J.A., Tobin P.J., Dip A., et al. J Vac Sci Technol B 17 (1999) 1424
49. Yang J., Neudeck G.W., and Denton J.P. Appl Phys Lett 77 (2000) 4034
50. Fiorenza J.G., Braithwaite G., Leitz C.W., Currie M.T., Yap J., Singaporewala F., et al. Semicond Sci Technol 19 (2004) L4
51. Sugii N, Kondo M, Miyamoto M, Hoshino Y, Hatori M, Hirasawa W, et al. In: Symposium on VLSI technology. Kyoto, Japan; 2005. p. 54.
52. Thean AVY, White T, Sadaka M, McCormick L, Ramon M, Mora R, et al. In: Symposium on VLSI technology. Kyoto Japan; 2005. p. 134.
53. Thean AVY, Prabhu L, Vartnanian V, Ramon M, Nguyen BY, White T, et al. In: Proceedings of the 2005 IEDM conference. Washington (USA); 2005. p. 515.
54. Thean AVY, Zhang D, Vartanian V, Adams V, Conner J, Canonico M, et al. In: 2006 Symposium on VLSI technology. Honolulu (USA); 2006. p. 164.
55. Collaert N, Rooyackers R, Clemente F, Zimmerman P, Cayrefourcq I, Ghyselen B, et al. In: 2006 Symposium on VLSI technology. Honolulu (USA); 2006. p. 64.
56. Yin H, Ren Z, Chen H, Holt J, Liu X, Sleight JW, et al. In: 2006 Symposium on VLSI technology. Honolulu (USA); 2006. p. 94.
57. Cristoloveanu S., et al. IEEE Trans Electron Dev 47 (2000) 1018
58. Hovel H.J. Solid State Electron 47 (2003) 1311
59. Williams S., Cristoloveanu S., and Campisi G. Mater Sci Eng B 12 (1992) 191
60. Allibert F, Bresson N, Bellatreche K, Maunand-Tussot C, Cristoloveanu S. In: 2005 IEEE Int SOI Conf; 2005. p. 59.