Monolithic integration of InP-based transistors on Si substrates using MBE

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1979-1983

  Liu, W K ^a   Lubyshev, D ^a   Fastenau, J M ^a   Wu, Y ^a   Bulsara, M T ^b   Fitzgerald, E A ^b   Urteaga, M ^c   Ha, W ^c   Bergman, J ^c   Brar, B ^c   Hoke, W E ^d   LaRoche, J R ^d   Herrick, K J ^d   Kazior, T E ^d   Clark, D ^d   Smith, D ^d   Thompson, R F ^d   Drazek, C ^e   Daval, N ^e  

^a IQE INC   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c TELEDYNE SCIENTIFIC COMPANY   (United States)

^d RAYTHEON COMPANY   (United States)

^e PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

A3. III V on Si integration; A3. Molecular beam epitaxy; B1. GeOI Si; B1. InP; B1. Si; B1. SOLES; B3. InP HBT

Indexed keywords

BIPOLAR TRANSISTORS; CRYSTAL GROWTH; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

A3. III-V ON SI INTEGRATION; A3. MOLECULAR BEAM EPITAXY; B1. GEOI/SI; B1. INP; B1. SI; B1. SOLES; B3. INP-HBT;

SUBSTRATES;

EID: 63349105803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.061     Document Type: Article

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