Characterization of Y 2 O 3 gate dielectric on n-GaAs substrates

Applied Surface Science

Volumn 256, Issue 7, 2010, Pages 2245-2251

  Das, P S ^a   Dalapati, G K ^b   Chi, D Z ^b   Biswas, A ^c   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF CALCUTTA   (India)

Author keywords

Energy band alignment; GaAs; Interface properties

Indexed keywords

AMMONIUM HYDROXIDE; BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRIC FIELDS; GALLIUM ARSENIDE; GATE DIELECTRICS; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SUBSTRATES;

ENERGY-BAND ALIGNMENT; EQUIVALENT OXIDE THICKNESS; GAAS; INTERFACE PROPERTY; LOW-FIELD LEAKAGE CURRENTS; LOW-FREQUENCY DISPERSIONS; PHYSICAL AND ELECTRICAL PROPERTIES; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 74149092039     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.046     Document Type: Article

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