Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Cao, Y ^a   Zhang, J ^a   Li, X ^a   Kosel, T H ^a   Fay, P ^a   Hall, D C ^a   Zhang, X B ^b   Dupuis, R D ^b   Jasinski, J B ^c   Liliental Weber, Z ^c  

^a University of Notre Dame   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; INTERFACIAL PARTICLES; OXIDE FILMS; THERMAL OXIDATION;

CAPACITANCE; CURRENT DENSITY; ELECTRIC PROPERTIES; ELLIPSOMETRY; FERMI LEVEL; MICROSTRUCTURE; MOS DEVICES; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 21044438497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861981     Document Type: Article

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