Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 119-120

  Huang, C H ^a   Yang, M Y ^a   Chin, Albert ^a   Chen, W J ^b   Zhu, C X ^c   Cho, B J ^c   Li, M F ^c   Kwong, D L ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; ENERGY DISPERSIVE SPECTROSCOPY; HOLE MOBILITY; PLASMA APPLICATIONS; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; ALUMINUM OXIDE; GATE DIELECTRICS; GERMANIUM COMPOUNDS; MOSFET DEVICES; SILICA;

GATE DIELECTRICS;

MOSFET DEVICES; HOLE MOBILITY;

DISLOCATION FREE; DRIVE CURRENTS; GE ON INSULATORS; HIGH QUALITY; P-MOSFETS; PERFORMANCE;

EID: 0141426803     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C. O. Chui et al., IEDM Tech. Dig. (2002), p. 437.
2. J. Hoyt et al., IEDM Tech. Dig. (2002), p. 23.
3. Y. H. Wu and A. Chin, IEEE EDL 21, p. 350 (2000).
4. A. Chin et al., Symp. On VLSI Tech, (1999), p. 135.
5. Y. H. Wu et al., J. Electrochemical Soc.147, p. 2254 (2000).