Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Suri, Rahul ^a   Lichtenwalner, Daniel J ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIELECTRIC DEVICES; ENERGY STORAGE; MOS CAPACITORS; SEMICONDUCTING GALLIUM;

ELECTRICAL CHARACTERISTICS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

HAFNIUM COMPOUNDS;

EID: 45749149519     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949079     Document Type: Article

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