XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

Applied Surface Science

Volumn 256, Issue 2, 2009, Pages 517-520

  Kumar, Praveen ^a,b   Kumar, Mahesh ^a   Govind, ^a   Mehta, B R ^b   Shivaprasad, S M ^c  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

GaAs; GaN; XPS

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL ANALYSIS; CHEMICAL SHIFT; DEFECT DENSITY; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; GALLIUM ARSENIDE; GALLIUM NITRIDE; GALLIUM PHOSPHIDE; ION BEAMS; ION BOMBARDMENT; MAGNESIA; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; SECONDARY EMISSION; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SILICON COMPOUNDS; SUBSTRATES; TEMPERATURE; THERMAL EXPANSION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

CHEMICAL COMPOSITIONS; FOUR-FOLD SYMMETRY; GAAS; HIGH DEFECT DENSITIES; LINE SHAPE ANALYSIS; LOW TEMPERATURE METHOD; SECONDARY ELECTRON EMISSION SPECTRA; ZINC-BLENDE STRUCTURES;

III-V SEMICONDUCTORS;

EID: 70449529384     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.104     Document Type: Article

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