Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3185-3191

  Arora, Rajan ^a,b   Rozen, John ^a,c   Fleetwood, Daniel M ^a   Galloway, Kenneth F ^a   Xuan Zhang, C ^a   Han, Jisheng ^d   Dimitrijev, Sima ^d   Kong, Fred ^d   Feldman, Leonard C ^a,d   Pantelides, Sokrates T ^e   Schrimpf, Ronald D ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^d GRIFFITH UNIVERSITY   (Australia)

^e RUTGERS UNIVERSITY   (United States)

Author keywords

3C SiC; 4H SiC; MOS; N2 o; No; Poa

Indexed keywords

CHARGE TRAPPING PROPERTIES; GATE OXIDE; H-BASED; NITROGEN CONTENT; OXIDE CHARGE TRAPPING; SIC MOS CAPACITOR; TRAP DENSITY;

CAPACITANCE; CAPACITORS; CHARGE TRAPPING; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); IONIZING RADIATION; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES;

MOS CAPACITORS;

EID: 72349089720     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2031604     Document Type: Conference Paper

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