The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2231-2235

  Chen, Tianbing ^a   Luo, Zhiyun ^a   Cressler, John D ^a   Isaacs Smith, Tamara F ^b   Williams, John R ^b   Chung, Gilyong ^c   Clark, Steve D ^d  

^a AUBURN UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c Sterling Semiconductor   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

MOS; Passivation; Radiation; Silicon carbide

Indexed keywords

DOSIMETRY; GAMMA RAYS; NITROGEN OXIDES; PASSIVATION; SILICA; SILICON CARBIDE;

RADIATION RESPONSE;

MOS CAPACITORS;

EID: 0036890932     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00236-8     Document Type: Article

References (8)

1. Baliga B.J. The future of power semiconductor device technology. Proc. IEEE. 89:2001;822-832.
2. Baliga B.J. High voltage silicon carbide devices. Proc. MRS Symp. 512:1998;77-89.
3. Chung G.Y., Tin C.C., Williams J.R., McDonald K., Ventra M Di., Pantelides S.T.et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Appl. Phys. Lett. 76:2000;1713-1715.
4. Chung G.Y., Tin C.C., Williams J.R., McDonald K., Chanana R.K., Weller R.A.et al. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron. Dev. Lett. 22:2001;176-178.
5. 2 interface. IEEE Trans Nucl Sci 2001;48:2229-32.
6. Shanfield Z., Brown G.A., Revesz A.G., Hughes H.L. A new MOS radiation-induced charge: negative fixed interface charge. IEEE Trans. Nucl. Sci. 39:1992;303-307.
7. Schroder D.K. Semiconductor Material and Device Characterization. 1998;Wiley, London.
8. Brady F.T., Chu J.T., Li S.S., Krull W. A study of the effects of processing on the response of implanted buried oxides to total dose irradiation. IEEE Trans. Nucl. Sci. 37:1990;1995-2000.