Critical material and processing issues of SiC electronic devices

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 387-391

  Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Fabrication problems; Semiconductors; Silicon carbide

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ENERGY GAP; ION IMPLANTATION; MOS DEVICES; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES;

MICROWAVE FREQUENCIES;

SILICON CARBIDE;

EID: 0006815908     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01746-1     Document Type: Article

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