The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2229-2232

  Sheridan, David C ^a   Chung, Gilyong ^b   Clark, Steve ^c   Cressler, John D ^a  

^a AUBURN UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

Diodes; Gamma radiation; Schottky barrier; Silicon carbide (SiC)

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GAMMA RAYS; MOS CAPACITORS; POWER SUPPLY CIRCUITS; RADIATION EFFECTS; SILICON CARBIDE;

GAMMA IRRADIATION;

SCHOTTKY BARRIER DIODES;

EID: 0035724845     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983200     Document Type: Conference Paper

References (7)

1. SiC neutron detectors for high-temperature operation
2. Demonstration of an SiC neutron detector for high-radiation environments
3. Silicon carbide JFET radiation response
4. Surface breakdown and stability of high-voltage planar junctions
5. MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
6. Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors