Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Soares, G V ^a   Baumvol, I J R ^a,b   Hold, L ^c,d   Kong, F ^c,d   Han, J ^c,d   Dimitrijev, S ^c,d   Radtke, C ^a   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c GRIFFITH UNIVERSITY   (Australia)

^d GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; HEAT TREATMENT; ION BEAMS; NITROGEN OXIDES; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE-VOLTAGE MEASUREMENTS; OXYNITRIDATIONS; VOLTAGE SHIFT;

SILICON CARBIDE;

EID: 34547469930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2763966     Document Type: Article

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