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Journal of Applied Physics

Volumn 76, Issue 3, 1994, Pages 1363-1398

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

(6) Morkoc H a Strite, S a Gao, G B a Lin, M E a Sverdlov, B a Burns, M a

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544461610 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.358463 Document Type: Article

Times cited : (2615)

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