Metal nanocrystals synthesized with a micellar template based on a diblock copolymer for three-dimensional nonvolatile memory

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Kim, Chung Jin ^a   Ryu, Seong Wan ^a   Choi, Yang Kyu ^a   Chang, Jae Joon ^b   Bae, Su Hak ^b   Sohn, Byeong Hyeok ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMERS; COBALT; COPOLYMERIZATION; HYDROGEN; NANOCRYSTALS; POLYMERS; THREE DIMENSIONAL;

DIBLOCK COPOLYMERS; FLOATING GATE MEMORIES; FLOATING GATE MEMORY DEVICES; HYDROGEN ANNEALING; MEMORY PERFORMANCE; MEMORY WINDOWS; METAL NANOCRYSTALS; NON-VOLATILE MEMORIES; PLANAR SURFACES; RETENTION TIME; SPATIAL DISTRIBUTIONS; TEMPLATE-BASED; UNIFORM SIZES;

DATA STORAGE EQUIPMENT;

EID: 51849127310     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2969051     Document Type: Article

References (17)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996).
2. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.802617 49, 1606 (2002).
3. T. Ishii, T. Osabe, T. Mine, F. Murai, and K. Yano, Tech. Dig.-Int. Electron Devices Meet. 2000, 305.
4. K. W. Guarini, C. T. Black, Y. Zhang, I. V. Babich, E. M. Sikorski, and L. M. Gignac, Tech. Dig.-Int. Electron Devices Meet. 2003, 22.2.1.
5. D. Shahrjerdi, D. I. Garcia-Gutierrez, and S. K. Banerjee, IEEE Electron Device Lett. 28, 793 (2007). 0741-3106
6. G. Atwood, IEEE Trans. Device Mater. Reliab. 1530-4388 10.1109/TDMR.2004.837117 4, 301 (2004).
7. L. Risch, Solid-State Electron. 0038-1101 10.1016/j.sse.2006.03.026 50, 527 (2006).
8. Y. -K. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T. -J. King, J. Bokor, and C. Hu, Tech. Dig.-Int. Electron Devices Meet. 2001, 421.
9. B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. -Y. Yang, C. Tabery, C. Ho, Q. Xiang, T. -J. King, J. Bokor, C. Hu, M. -R. Lin, and D. Kyser, Tech. Dig.-Int. Electron Devices Meet. 2002, 251.
10. B. S. Doyle, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kacalieros, T. Linton, A. Murthy, R. Rios, and R. Chau, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2003.810888 24, 263 (2003).
11. S. S. Kim, W. -J. Cho, C. -G. Ahn, K. Im, J. -H. Yang, I. -B. Baek, S. Lee, and K. S. Lim, Appl. Phys. Lett. 0003-6951 10.1063/1.2208268 88, 223502 (2006).
12. J. Sarkar, S. Tang, D. Shahrjerdi, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 10.1063/1.2711528 90, 103512 (2007).
13. S. -H. Yun, S. I. Yoo, J. C. Jung, W. -C. Zin, and B. -H. Sohn, Chem. Mater. 0897-4756 10.1021/cm0618953 18, 5646 (2006).
14. S. Förster and M. Antonietti, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/(SICI)1521-4095(199802)10:3<195::AID-ADMA195>3.0.CO;2-V 10, 195 (1998).
15. H. -G. Boyen, G. Kästle, K. Zürn, T. Herzog, F. Weigl, P. Ziemann, O. Mayer, C. Jerome, M. Möller, J. P. Spatz, M. G. Garnier, and P. Oelhanfen, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200304319 13, 359 (2003).
16. C. Y. Lee, J. -H. Kwon, J. -S. Lee, Y. -M. Kim, Y. J. Choi, H. J. Shin, J. G. Lee, and B. -H. Sohn, Appl. Phys. Lett. 0003-6951 10.1063/1.2798502 91, 153506 (2007).
17. W. -J. Cho, C. -G. Ahn, K. Im, J. -H. Yang, J. Oh, I. -B. Baek, and S. Lee, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.829007 25, 366 (2004).