Vapor deposition of ruthenium from an amidinate precursor

Journal of the Electrochemical Society

Volumn 154, Issue 12, 2007, Pages

  Li, Huazhi ^a   Farmer, Damon B ^b   Gordon, Roy G ^a,c   Lin, Youbo ^b,c   Vlassak, Joost ^b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMIDINATE PRECURSOR; PULSED CHEMICAL VAPOR DEPOSITION (CVD); PURE SPUTTERED RUTHENIUM; SENSITIVE SUBSTRATES;

ATOMIC LAYER DEPOSITION; RUTHENIUM; SPUTTERING; SURFACE ROUGHNESS; THIN FILMS; TUNGSTEN COMPOUNDS;

VAPOR DEPOSITION;

EID: 35548942230     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2789294     Document Type: Article

References (27)

1. C. S. Hwang, Mater. Sci. Eng., B, 56, 178 (1998); M. Nayak, S. Ezhilvalavan, and T. Y. Tseng, in Handbook of Thin Film Materials, H. S. Nalwa, Editor, p. 121, Academic Press, New York (2001).
2. C. S. Hwang, Mater. Sci. Eng., B, 56, 178 (1998); M. Nayak, S. Ezhilvalavan, and T. Y. Tseng, in Handbook of Thin Film Materials, H. S. Nalwa, Editor, p. 121, Academic Press, New York (2001).
3. M. Tapajna, P. Pisecny, R. Luptak, K. Husekova, K. Froehlich, L. Harmatha, J. C. Hooker, F. Roozeboom, and J. Jergel, Mater. Sci. Semicond. Process., 7, 271 (2004).
4. T. Seidel, A. Londergan, J. Winkler, X. Liu, and S. Ramanathan, Solid State Technol., 46, 67 (2003).
5. I. Goswami and R. Laxman, Semicond. Int., 27, 49 (2004).
6. T. Takenaga, T. Kuroiwa, T. Furukawa, M. Taki, K. Yoshiara, and Y. Tokuda, Jpn. J. Appl. Phys., Part 1, 99, 08C911 (2006).
7. B. J. Mun and S. Hak, U.S. Pat. 7,125,655 (2006).
8. A. Koeckritz, M. Sebek, A. Dittmar, J. Radnik, A. Brueckner, U. Bentrup, M.-M. Pohl, H. Hugl, and W. Maegerlein, J. Mol. Catal. A: Chem., 246, 85 (2006).
9. M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Brasen, J. Electrochem. Soc. 0013-4651 10.1149/1.2113647, 132, 2677 (1985); T. Aoyama and K. Eguchi, Jpn. J. Appl. Phys., Part 2, 38, L1134 (1999).
10. M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Brasen, J. Electrochem. Soc. 0013-4651 10.1149/1.2113647, 132, 2677 (1985); T. Aoyama and K. Eguchi, Jpn. J. Appl. Phys., Part 2, 38, L1134 (1999).
11. J. C. Viguí and J. Spitz, J. Electrochem. Soc. 0013-4651 10.1149/1.2134266, 122, 585 (1975); J. Vetrone, C. M. Foster, G.-R. Bai, A. Wang, J. Patel, and X. Wu, J. Mater. Res. 0884-2914, 13, 2281 (1998); J.-H. Lee, J.-Y. Kim, S.-W. Rhee, D. Y. Yang, D.-H. Kim, C.-H. Yang, Y.-K. Han, and C.-J. Hwang, J. Vac. Sci. Technol. A, 18, 2400 (2000).
12. J. C. Viguí and J. Spitz, J. Electrochem. Soc. 0013-4651 10.1149/1.2134266, 122, 585 (1975); J. Vetrone, C. M. Foster, G.-R. Bai, A. Wang, J. Patel, and X. Wu, J. Mater. Res. 0884-2914, 13, 2281 (1998); J.-H. Lee, J.-Y. Kim, S.-W. Rhee, D. Y. Yang, D.-H. Kim, C.-H. Yang, Y.-K. Han, and C.-J. Hwang, J. Vac. Sci. Technol. A, 18, 2400 (2000).
13. J. C. Viguí and J. Spitz, J. Electrochem. Soc. 0013-4651 10.1149/1.2134266, 122, 585 (1975); J. Vetrone, C. M. Foster, G.-R. Bai, A. Wang, J. Patel, and X. Wu, J. Mater. Res. 0884-2914, 13, 2281 (1998); J.-H. Lee, J.-Y. Kim, S.-W. Rhee, D. Y. Yang, D.-H. Kim, C.-H. Yang, Y.-K. Han, and C.-J. Hwang, J. Vac. Sci. Technol. A, 18, 2400 (2000).
14. E. P. Boyd, D. R. Ketchum, H. Deng, and S. G. Shore, Chem. Mater. 0897-4756 10.1021/cm9605330, 9, 1154 (1997); Y. Senzaki, W. L. Gladfelter, and F. B. McCormick, Chem. Mater. 0897-4756 10.1021/cm00036a008, 5, 1715 (1993); Y.-H. Lai, Y.-L. Chen, Y. Chi, C.-S. Liu, A. J. Carty, S.-M. Peng, and G.-H. Lee, J. Mater. Res., 13, 1999 (2003).
15. E. P. Boyd, D. R. Ketchum, H. Deng, and S. G. Shore, Chem. Mater. 0897-4756 10.1021/cm9605330, 9, 1154 (1997); Y. Senzaki, W. L. Gladfelter, and F. B. McCormick, Chem. Mater. 0897-4756 10.1021/cm00036a008, 5, 1715 (1993); Y.-H. Lai, Y.-L. Chen, Y. Chi, C.-S. Liu, A. J. Carty, S.-M. Peng, and G.-H. Lee, J. Mater. Res., 13, 1999 (2003).
16. E. P. Boyd, D. R. Ketchum, H. Deng, and S. G. Shore, Chem. Mater. 0897-4756 10.1021/cm9605330, 9, 1154 (1997); Y. Senzaki, W. L. Gladfelter, and F. B. McCormick, Chem. Mater. 0897-4756 10.1021/cm00036a008, 5, 1715 (1993); Y.-H. Lai, Y.-L. Chen, Y. Chi, C.-S. Liu, A. J. Carty, S.-M. Peng, and G.-H. Lee, J. Mater. Res., 13, 1999 (2003).
17. T. Aaltonen, P. Aĺn, M. Ritala, and M. Leskelä, Chem. Vap. Deposition, 9, 45 (2003).
18. O.-K. Kwon, J.-H. Kim, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc., 151, G109 (2004).
19. T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskelä, Chem. Vap. Deposition, 10, 215 (2004).
20. Y.-S. Min, E. J. Bae, K. S. Jeong, Y. J. Cho, J.-H. Lee, W. B. Choi, and G.-S. Park, Adv. Mater. (Weinheim, Ger.), 15, 1019 (2003).
21. O.-K. Kwon, S.-H. Kwon, H.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett., 7, C46 (2004).
22. H. Li, T. Aaltonen, Z. Li, B. S. Lim, and R. G. Gordon, To be published.
23. J. S. Becker, S. Suh, and R. G. Gordon, Chem. Mater., 15, 2969 (2003).
24. J. J. Vlassak, Y. Lin, and T. Y. Tsui, Mater. Sci. Eng., A, 391, 159 (2005).
25. S. M. Rossnagel and T. S. Kuan, J. Vac. Sci. Technol. B, 22, 240 (2004).
26. R. G. Gordon, D. Hausmann, E. Kim, and J. Shepard, Chem. Vap. Deposition, 9, 73 (2003).
27. R. Wang, H. Chung, X. Tang, J. Y. Wang, W. D. Wang, Y. Tanaka, J. M. Yu, and P. Gopalraja, U.S. Pat. Application US2007/0059502 (2007).