Process optimization and characterization of deep metal-junction contact

Microelectronic Engineering

Volumn 71, Issue 3-4, 2004, Pages 321-328

  Lee, Junghwan ^a   Cha, Jaehan ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Aspect ratio; Contact resistance; Schottky barrier; Thermionic emission model; Ti thickness

Indexed keywords

ASPECT RATIO; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; THERMIONIC EMISSION; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT RESISTANCE; SCHOTTKY BARRIER; THERMIONIC EMISSION MODEL; TI THICKNESS;

MICROELECTRONIC PROCESSING;

EID: 1842639886     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.02.006     Document Type: Article

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