Nitride mediated epitaxy of Co Si2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

  Lee, Han Bo Ram ^a   Son, J Y ^a   Kim, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING;

PLASMA-ENHANCED ATOMIC LAYER DEPOSITION (PE-ALD);

SILICIDES;

EID: 34249748940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2742791     Document Type: Article

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