Alteration of Cu conductivity in the size effect regime

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 240-247

  Rossnagel, S M ^a   Kuan, T S ^b  

^a IBM RESEARCH   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON SCATTERING; FERMI SURFACE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IMPURITIES; MAGNETRON SPUTTERING; OXIDATION; SURFACE ROUGHNESS; THIN FILMS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON MEAN-FREE-PATH; SURFACE SCATTERING;

COPPER;

EID: 1642397073     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1642639     Document Type: Conference Paper

References (26)

1. H.-D. Liu, Y.-P. Zhao, G. Ramanath, S. P. Murarka, and G.-C. Wang, Thin Solid Films 384, 151 (2001).
2. Q.-T. Jiang and M. E. Thomas, J. Vac. Sci. Technol. B 19, 762 (2001).
3. M. Li, Y.-P. Zhao, and G.-C. Wang, J. Vac. Sci. Technol. A 18, 2992 (2000).
4. E. V. Narnat, D. Nagakura, P.-I. Wang, and T.-M. Lu, J. Appl. Phys. 91, 1667 (2002).
5. S. M. Rossnagel and T. S. Kuan, J. Vac. Sci. Technol. A 20, 1911 (2002).
6. T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y.-P. Zhao, G.-C. Wang, S. M. Rossnagel, and C. Cabral, Mater. Res. Soc. Symp. Proc. 612, D7.1.1 (2000).
7. A. F. Mayadas and M. Shatzkes, Phys. Rev. B 1, 1382 (1970).
8. J. M. E. Harper, C. Cabral, Jr., P. C. Andricacos, L. Gignac, I. C. Noyan, K. P. Rodbell, and C. K. Hu, J. Appl. Phys. 86, 2516 (1999).
9. C. Inoki (unpublished, 2001).
10. Handbook of Electrical Resistivities of Binary Alloys (Chemical Rubber Corp., Cleveland, OH, 1983).
11. J. M. E. Harper, E. G. Colgan, C.-K. Hu, J. P. Hummel, L. P. Buchwalter, and C. E. Uzoh, MRS Bull. 514, 23 (1994).
12. Applied Materials Corporation, Endura PVD system.
13. Q.-T. Jiang, M.-H. Tsai, and R. H. Havemann, Proceedings International Interconnect Technical Conference, Burlingame, CA, 6-01 2001.
14. G. Steinlesberger, M. Engelhardt, G. Schindler, W. Steinhogl, A. von Glasgow, K. Mosig, and E. Bertagnolli, Microelectron. Eng. 64, 409 (2002).
15. W. Steinhogl, G. Schindler, G. Setinlesberger, and M. Engelhardt, Phys. Rev. B 66, 075414 (2002).
16. C. Cabral, Jr. et al., Advanced Metallization Conference Proceedings USLI XIV, 1999, p. 81.
17. L. M. Gignac, K. P. Rodbell, C. Cabral, Jr., P. Andricacos, P. M. Rice, R. B. Beyers, P. Locke, and S. J. Klepsis, Mater. Res. Soc. Symp. Proc. 562, 209 (1999).
18. G. Katz, Appl. Phys. Lett. 12, 161 (1968).
19. J.-W. He and P. J. Moller, Surf. Sci. 178, 934 (1986).
20. C.-A. Chang, J. Appl. Phys. 67, 566 (1990).
21. B. G. Demczyk, R. Naik, G. Auner, C. Kota, and U. Rao, J. Appl. Phys. 75, 1956 (1994).
22. I. Hashim, B. Park, and H. A. Atwater, Appl. Phys. Lett. 63, 2833 (1993).
23. B. W. Karr, Y. W. Kim, I. Petrov, D. B. Bergstrom, D. G. Cahill, J. E. Greene, L. D. Madsen, and J.-E. Sundgren, J. Appl. Phys. 80, 6699 (1996).
24. W. Egelhoff (unpublished).
25. W. F. Egelhoff, Jr. et al., J. Appl. Phys. 80, 5183 (1966).
26. W. F. Egelhoff, Jr., P. J. Chen, C. J. Powell, M. D. Stiles, and R. D. McMichael, J. Appl. Phys. 79, 2491 (1996).