Characterization and reliability study of low temperature hermetic wafer level bonding using In/Sn interlayer and Cu/Ni/Au metallization

Journal of Alloys and Compounds

Volumn 485, Issue 1-2, 2009, Pages 444-450

  Yu, Da Quan ^a   Lee, Chengkuo ^a,b   Yan, Li Ling ^a   Thew, Meei Ling ^a   Lau, John H ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Hermeticity; In Sn; Intermetallic compound; Low temperature bonding; WLP

Indexed keywords

BONDING LINE; DIFFUSION PROCESS; FAILURE MECHANISM; FREE JOINTS; HERMETICITY; HIGH HUMIDITY; HIGH TEMPERATURE INTERMETALLICS; HIGH TEMPERATURE STORAGE; IMPROVEMENT METHODS; IN/SN SOLDER; INTERMETALLIC COMPOUNDS; LOW TEMPERATURE BONDING; LOW TEMPERATURES; METALLIZATIONS; MICROELECTROMECHANICAL SYSTEMS; PACKAGING APPLICATIONS; PRESSURE COOKER TEST; RELIABILITY TEST; TEMPERATURE CYCLING TESTS; WAFER BONDERS; WAFER LEVEL;

BONDING; ELECTRIC BATTERIES; ELECTRONICS PACKAGING; MEMS; METALLIZING; MICROELECTROMECHANICAL DEVICES; RELIABILITY; SEALS; SEMICONDUCTING INTERMETALLICS; SOLDERING ALLOYS; TIN;

WAFER BONDING;

EID: 72049094259     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.05.136     Document Type: Article

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