Amorphous Si/Au wafer bonding

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Chen, P H ^a   Lin, C L ^a   Liu, C Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; EUTECTICS; GOLD ALLOYS; INTERFACES (MATERIALS); SILICON WAFERS;

AIR VOIDS; BONDING INTERFACE; FEASIBILITY;

WAFER BONDING;

EID: 34047107749     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719025     Document Type: Article

References (12)

1. M. Alexe and U. Gösele, Wafer Bonding Applications and Technology (Springer, Berlin, 2004), pp. 1-54.
2. Frank Shi, K. L. Chang, John Epple, C. F. Xu, K. Y. Cheng, and K. C. Hsieh, J. Appl. Phys. 92, 7544 (2002).
3. Frank Shi, Hao Chen, and Scott Maclaren, Appl. Phys. Lett. 84, 3504 (2004).
4. A. V. Krishnamoorthy and K. W. Goossen, IEEE J. Sel. Top. Quantum Electron. 4, 899 (1998).
5. K. N. Chen, A. Fan, C. S. Tan, R. Reif, and C. Y. Wen, Appl. Phys. Lett. 81, 3774 (2002).
6. R. F. Wolffenbuttel and K. D. Wise, Sens. Actuators, A 43, 223 (1994).
7. R. F. Wolffenbuttel, Sens. Actuators, A 62, 680 (1997).
8. A. L. Tiensuu, M. Bexell, J. A. Schweitz, L. Smith, and S. Johansson, Sens. Actuators, A 45, 227 (1994).
9. Jin Wook Jang, Scott Hayes, Jong Kai Lin, and Darrel R. Freer, J. Appl. Phys. 95, 6077 (2004).
10. Donald S. Gardner and Paul A. Flinn, IEEE Trans. Electron Devices 35, 2160 (1988).
11. Kenji Hinnode, Isamu Asano, and Yoshio Homma, IEEE Trans. Electron Devices 36, 1050 (1989).
12. William D. Callister, Jr., Materials Science and Engineering: An Introduction, 6th ed. (Wiley, New York, 2003), p. 739.