The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization

Applied Physics Letters

Volumn 94, Issue 3, 2009, Pages

  Yu, Da Quan ^a   Lee, Chengkuo ^a,b   Yan, Li Ling ^a   Choi, Won Kyoung ^a   Yu, Aibin ^a   Lau, John H ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BRAZING; BUFFER LAYERS; INTERMETALLICS; MELTING POINT; METALLIZING; SOLDERING ALLOYS; WELDING;

HERMETICITY; HIGH TEMPERATURE INTERMETALLICS; HIGH YIELDS; HIGH-MELTING; LOW TEMPERATURES; METALLIZATION; WAFER-TO-WAFER BONDINGS;

WAFER BONDING;

EID: 58849125006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3074367     Document Type: Article

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