Wafer-level plasma activated bonding: New technology for MEMS fabrication

Microsystem Technologies

Volumn 14, Issue 4-5, 2008, Pages 509-515

  Dragoi, Viorel ^a   Mittendorfer, Gerald ^a   Thanner, Christine ^a   Lindner, Paul ^a  

^a EV GROUP   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

MEMS; PLASMA APPLICATIONS; THERMODYNAMIC PROPERTIES; THIN FILMS;

MEMS FABRICATION; PLASMA ACTIVATED BONDING;

WAFER BONDING;

EID: 41149155406     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-007-0437-7     Document Type: Conference Paper

References (11)

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2. Turner KT, Mlcak R, Roberts DC, Spearing SM (2002) Bonding of bulk piezoelectric material to silicon using a gold-tin eutectic bond. MRS Proc Series 687:B.3.2.1.-B.3.2.6.
3. Tsau CH, Spearing SM, Schmidt MA (2004) Characterization of Wafer-Level Thermocompression Bonds. J Microelectromech Syst 13(6):963-971
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9. Mizuno J, Ishida H, Farrens S, Dragoi V, Shinohara H, Suzuki T, Ishizuka M, Glinsner T, Lindner P, Shoji S (2005) Transducers 2005. In: IEEE Proceedings, Seoul, South Korea, p 1346
10. Lea Di Cioccio (2006) New heterostructures and 3-D devices obtained at CEA/Leti by the bonding and thinning method. ECS Trans 3(6):19-32
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