Strong, high-yield and low-temperature thermocompression silicon wafer-level bonding with gold

Journal of Micromechanics and Microengineering

Volumn 14, Issue 7, 2004, Pages 884-890

  Taklo, M M V ^a   Storas P ^a   Schjolberg Henriksen K ^a   Hasting, H K ^b   Jakobsen, H ^c  

^a SINTEF   (Norway)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c HVE   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); BONDING; ENERGY DISPERSIVE SPECTROSCOPY; GOLD; HERMETIC DEVICES; INTERFACES (MATERIALS); MICROELECTROMECHANICAL DEVICES; PROCESSING; TEMPERATURE CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

HIGH BOND YIELD; OPTIMAL PROCESS PARAMETERS; PULL TESTS; THERMOCOMPRESSION;

SILICON WAFERS;

EID: 3242740944     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/7/007     Document Type: Article

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