Molecular rectification in metal-SAM-metal oxide-metal junctions

Journal of the American Chemical Society

Volumn 131, Issue 49, 2009, Pages 17814-17827

  Nijhuis, Christian A ^a   Reus, William F ^a   Whitesides, George M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKANETHIOLATES; APPLIED VOLTAGES; ELECTRICAL CONTACTS; EUTECTIC ALLOYS; EXPERIMENTAL TECHNIQUES; FERROCENES; GALLIUM OXIDES; HEAD GROUPS; HIGH YIELD; METAL JUNCTIONS; METAL OXIDES; MOLECULAR RECTIFICATIONS; NON-NEWTONIAN PROPERTY; RECTIFICATION RATIO; ROOM TEMPERATURE; SAMS; STANDARD DEVIATION; STATISTICAL ANALYSIS; STATISTICAL SIGNIFICANCE; SURFACE OXIDE; TUNNELING JUNCTIONS; ULTRAFLAT;

ELECTRIC PROPERTIES; FLUORINE CONTAINING POLYMERS; GALLIUM; GALLIUM ALLOYS; INDIUM ALLOYS; IRON COMPOUNDS; METALLIC COMPOUNDS; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS; SILVER; SILVER ALLOYS; SKIN; TUNNELING (EXCAVATION); WIND TUNNELS;

ELECTRIC RECTIFIERS;

ALLOY; FERROCENE; GALLIUM; INDIUM; METAL OXIDE; SILVER;

ARTICLE; DENSITY; ELECTRIC POTENTIAL; LIQUID; MOLECULAR DYNAMICS; MONOLAYER CULTURE; ROOM TEMPERATURE; SELD ASSEMBLED MONOLAYER; SURFACE PROPERTY;

EID: 71749115445     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9048898     Document Type: Article

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84. A detailed physical-organic study to control the potential drops along the SAM, including J(V) curves measured at different temperatures, to elucidate the mechanism of rectification in more detail, will be reported in a separate paper: Nijhuis, C. A.; Reus, W. F.; Whitesides, G. M., manuscript in preparation.