Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface

Journal of Physical Chemistry B

Volumn 110, Issue 28, 2006, Pages 13947-13958

  Lenfant, S ^a   Guerin, D ^a   Van Tran, F ^b   Chevrot, C ^b   Palacin, S ^c   Bourgoin, J P ^c   Bouloussa, O ^d   Rondelez, F ^d   Vuillaume, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITÉ DE CERGY PONTOISE   (France)

^c CEA SACLAY   (France)

^d INSTITUT CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; AROMATIC HYDROCARBONS; ATOMIC FORCE MICROSCOPY; ELECTRON TUBE DIODES; ELLIPSOMETRY; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR STRUCTURE; MONOLAYERS; SYNTHESIS (CHEMICAL);

ALKYL CHAIN; ELECTRICAL PROPERTIES; ENERGY POSITION; VOLTAGE CURVE;

ELECTRON TRANSPORT PROPERTIES;

EID: 33746900771     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp053510u     Document Type: Article

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