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Volumn 47, Issue 1, 2008, Pages 142-144

Eutectic gallium-indium (EGaIn): A moldable liquid metal for electrical characterization of self-assembled monolayers

Author keywords

Electrodes; Gallium; Indium; Monolayers; Tunnel junctions

Indexed keywords

ELECTRODES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LIQUID METALS; SILVER; TUNNEL JUNCTIONS;

EID: 37549043162     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200703642     Document Type: Article
Times cited : (601)

References (19)
  • 15
    • 34250845844 scopus 로고    scopus 로고
    • Hg has been used as a top contact for monolayers of alkanes on Si; these monolayers are formed, however, through the covalent attachment of alkenes to Si rather than the dynamic equilibria that are involved in the formation of SAMs on metals; see
    • Hg has been used as a top contact for monolayers of alkanes on Si; these monolayers are formed, however, through the covalent attachment of alkenes to Si rather than the dynamic equilibria that are involved in the formation of SAMs on metals; see: O. Seitz et al., J. Am. Chem. Soc. 2007, 129, 7494.
    • (2007) J. Am. Chem. Soc , vol.129 , pp. 7494
    • Seitz, O.1
  • 17
    • 0010944096 scopus 로고
    • -1: A. Bondi
    • -1: A. Bondi, Chem. Rev. 1953, 52, 417.
    • (1953) Chem. Rev , vol.52 , pp. 417
  • 18
    • 37549071563 scopus 로고    scopus 로고
    • The origin of the sudden change in the shape of the J-V trace in Figure 2a between V, ±0.05 is probably a switch from the low-bias regime (e V ≪ Φ) to the intermediate- bias regime (e V < Φ, whereby Φ is the height of the tunneling barrier imposed by the organic monolayer (within the often-used Simmons model, In the low-bias regime, J depends only linearly on V, but, in the intermediate bias regime, J depends exponentially on V as a result of the so-called barrier-lowering effect of the applied bias. We did not acquire data in small enough intervals of V to capture the shape of the J-V response in this region; the transition from low- to intermediate-bias regimes therefore appears as a discontinuity in the plot in Figure 2a; see: Chen et al. in Molecular Nanoelectronics Eds, M. A. Reed, T. Lee, American Scientific Publishers, Valencia, 2003
    • The origin of the sudden change in the shape of the J-V trace in Figure 2a between V = ±0.05 is probably a switch from the "low-bias regime" (e V ≪ Φ) to the "intermediate- bias regime" (e V < Φ), whereby Φ is the height of the tunneling barrier imposed by the organic monolayer (within the often-used Simmons model). In the low-bias regime, J depends only linearly on V, but, in the intermediate bias regime, J depends exponentially on V as a result of the so-called "barrier-lowering effect" of the applied bias. We did not acquire data in small enough intervals of V to capture the shape of the J-V response in this region; the transition from low- to intermediate-bias regimes therefore appears as a discontinuity in the plot in Figure 2a; see: Chen et al. in Molecular Nanoelectronics (Eds.: M. A. Reed, T. Lee), American Scientific Publishers, Valencia, 2003, pp. 1-76.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.