Impact of film structure on damage to low-k SiOCH film during plasma exposure

Journal of Physics D: Applied Physics

Volumn 42, Issue 23, 2009, Pages

  Yasuhara, Shigeo ^a   Chung, Juhyun ^a   Tajima, Kunitoshi ^b   Yano, Hisashi ^b   Kadomura, Shingo ^b   Yoshimaru, Masaki ^b   Matsunaga, Noriaki ^b   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; DIELECTRIC CONSTANTS; FILM STRUCTURE; IRRADIATION DAMAGE; LOW DIELECTRIC; METHYL GROUP; PLASMA EXPOSURE; PLASMA IRRADIATIONS; PLASMA-CVD; SIOC-H FILM;

CHEMICAL VAPOR DEPOSITION; DEGRADATION; DURABILITY; FLUORINE CONTAINING POLYMERS; HYDROCARBONS; IRRADIATION; PERMITTIVITY; PLASMA DEPOSITION; PLASMA ETCHING; SILICON;

PLASMAS;

EID: 70450196225     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/23/235201     Document Type: Article

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