Comparative studies of physical and chemical properties of plasma-treated CVD low k SiOCH dielectrics

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 269-274

  Tsang, C F ^a   Su, Y J ^a   Bliznetsov, V N ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

BEOL process integration; Low k dielectrics; PECVD; Plasma treatment

Indexed keywords

BLACK DIAMOND; CIRCUIT TRANSMISSION TIME; PHOTORESIST STRIPPING (PRS); PLASMA TREATMENT;

ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; METALLIZING; PHOTORESISTS; STRIPPING (REMOVAL); SURFACE ROUGHNESS;

DIELECTRIC MATERIALS;

EID: 4344641833     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.055     Document Type: Article

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