Characteristics under bias-temperature-stress of Cu/low-k a-SiCO:H structures prepared by plasma enhanced chemical vapor deposition using a hexamethyldisilane precursor and Cu sputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 8 A, 2003, Pages

  Shim, Cheonman ^a   Yang, Jaeyoung ^a   Choi, Munkyu ^a   Jung, Donggeun ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Bias temperature stress; Cu diffusion barrier; Low dielectric constant materials; Multilevel metallization

Indexed keywords

CHARACTERIZATION; COPPER; DIFFUSION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING; THERMAL EFFECTS;

BIAS TEMPERATURE STRESS; COPPER DIFFUSION BARRIER; COPPER SPUTTERING; HEXAMETHYLDISILANE PRECURSOR; LOW DIELECTRIC CONSTANT MATERIALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0141680549     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l910     Document Type: Letter

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