Study of oxygen influences on carbon doped silicon oxide low k thin films deposited by plasma enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 829-834

  Wang, M R ^a,b   Rusli, ^b   Xie, J L ^a   Babu, N ^a   Li, C Y ^a   Rakesh, K ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FILM DEPOSITION; FILM THICKNESS; FLOW RATES; WIRE RESISTANCE;

CAPACITANCE; CARBON; CURRENT VOLTAGE CHARACTERISTICS; DEFORMATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICA;

THIN FILMS;

EID: 3142720754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756696     Document Type: Article

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