Characterization of Carbon-Doped SiO2 Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane

Journal of the Electrochemical Society

Volumn 148, Issue 7, 2001, Pages

  Han, Licheng M ^a   Pan, Ji Sheng ^b   Chen, Shou Mian ^a   Balasubramanian, N ^a,d   Shi, Jianou ^c   Wong, Ling Soon ^c   Foo, P D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NOVELLUS SYSTEMS INC   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000380721     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1375797     Document Type: Article

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