Low-k SiOCH film deposited by plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and water vapor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3879-3884

  Shioya, Yoshimi ^a   Shimoda, Haruo ^a   Maeda, Kazuo ^a   Ohdaira, Toshiyuki ^b   Suzuki, Ryoichi ^b   Seino, Yutaka ^b  

^a Minory Bldg   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cu interconnections; Hardness; HMDSO; Low dielectric constant film; PALS; PE CVD; Pore size; SiOCH; Water vapor; Young's modulus

Indexed keywords

DEPOSITION; ELASTIC MODULI; HARDNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; THIN FILMS;

PALS; PE-CVD; SIOCH; WATER VAPOR;

SILICON COMPOUNDS;

EID: 23944443702     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3879     Document Type: Article

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