Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Thin Solid Films

Volumn 516, Issue 2-4, 2007, Pages 340-344

  Kim, Chang Young ^a   Kim, Seung Hyun ^a   Navamathavan, R ^a   Choi, Chi Kyu ^a   Jeung, Won Young ^b  

^a Jeju National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

DMDMS; FTIR; Low k material; PECVD; SiOC( H) films; XPS

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; SILANES; X RAY PHOTOELECTRON SPECTROSCOPY;

DIMETHOXYDIMETHYLSILANE (DMDMS); METAL INSULATOR SEMICONDUCTOR; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 36048975328     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.097     Document Type: Article

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