Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C -SiC/Si (001) interface

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

  Wen, C ^a,b   Wang, Y M ^a   Wan, W ^a   Li, F H ^a   Liang, J W ^c   Zou, J ^d  

^a INSTITUTE OF PHYSICS   (China)

^b SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION; IMAGE DECONVOLUTION; INTERFACIAL DEFECT; LATTICE-MISMATCHED; MICROSCOPIC IMAGE; MISFIT DEFECTS; MISFIT DISLOCATIONS; PARTIAL DISLOCATIONS; SHUFFLE DISLOCATIONS; STRAIN RELAXATION MECHANISM; STRUCTURE MAPS;

CRYSTAL STRUCTURE; STACKING FAULTS; STRAIN CONTROL; STRAIN RELAXATION;

DISLOCATIONS (CRYSTALS);

EID: 70350123077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3234380     Document Type: Article

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