Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM

Ultramicroscopy

Volumn 98, Issue 2-4, 2004, Pages 259-264

  Wang, D ^a,e   Zou, J ^b,c   He, W Z ^a,f   Chen, H ^a   Li, F H ^a   Kawasaki, K ^d   Oikawa, T ^d  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

^d JEOL LTD   (Japan)

^e FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^f NEW YORK UNIVERSITY SCHOOL OF MEDICINE   (United States)

Author keywords

001,004,043; 61.16.Bg; 61.72.Lk; Deconvolution; Dynamical diffraction effect correction; High resolution electron microscopy

Indexed keywords

DIFFRACTION; DISLOCATIONS (CRYSTALS); ERROR CORRECTION; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY;

CORE STRUCTURES;

SILICON COMPOUNDS;

GERMANIUM DERIVATIVE; SILICON DERIVATIVE;

ANALYTIC METHOD; ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; COMPLEX FORMATION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; STRUCTURE ANALYSIS;

SIGE;

EID: 1842577587     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2003.08.019     Document Type: Article

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