Structural defects in 3C-SiC grown on Si by supersonic jet epitaxy

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2509-2515

  Long, C ^a   Ustin, S A ^a   Ho, W ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STACKING FAULTS; THIN FILMS; TWINNING;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); LATTICE MISMATCH; SUPERSONIC JET EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032620185     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371085     Document Type: Article

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