Prospects for 3C-SiC bulk crystal growth

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 976-981

  Chaussende, D ^a   Mercier, F ^a   Boulle, A ^b   Conchon, F ^b   Soueidan, M ^c   Ferro, G ^c   Mantzari, A ^d   Andreadou, A ^d   Polychroniadis, E K ^d   Balloud, C ^e   Juillaguet, S ^e   Camassel, J ^e   Pons, M ^f  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b Ecole Nationale Superieure de Ceramique Industrielle   (France)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^e UNIVERSITÉ MONTPELLIER 2   (France)

^f GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

A2. Growth from vapor; B2. Semiconducting silicon compounds; Seed crystals

Indexed keywords

ELECTRONIC EQUIPMENT; OPTIMIZATION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

EPITAXIAL SYSTEM; SEED CRYSTALS;

CRYSTAL GROWTH;

EID: 39249085688     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.140     Document Type: Article

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