Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 18, 2007, Pages

  Tang, C Y ^a   Li, F H ^a   Wang, R ^b   Zou, J ^c   Zheng, X H ^d   Liang, J W ^d  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^c UNIVERSITY OF QUEENSLAND   (Australia)

^d INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347364723     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.184103     Document Type: Article

References (43)

1. F. M. Ross, R. M. Tromp, and M. C. Reuter, Science SCIEAS 0036-8075 10.1126/science.286.5446.1931 286, 1931 (1999).
2. J. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.76.725 76, 725 (2004).
3. O. G. Schmidt and K. Eberl, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.925244 48, 1175 (2001).
4. H. Nagasawa, T. Kawahara, and K. Yagi, Mater. Sci. Forum MSFOEP 0255-5476 389-393, 319 (2002).
5. C. Long, S. Ustin, and W. Ho, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371085 86, 2509 (1999).
6. S. Nutt, D. Smith, H. Jim, and R. Davis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.97661 50, 203 (1987).
7. Z. Zekentes, V. Papaioannou, B. Pecz, and J. Stoemenos, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(95)00330-4 157, 392 (1995).
8. X. H. Zheng, B. Qua, Y. T. Wanga, Z. Z. Daia, J. Y. Hanb, Hui Yanga, and J. W. Liang, J. Cryst. Growth JCRGAE 0022-0248 233, 40 (2001).
9. H. Nagasawa, K. Yagi, and T. Kawahara, J. Cryst. Growth JCRGAE 0022-0248 237-239, 1244 (2002).
10. P. Pirouz, C. Chorey, and J. Powell, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.97667 50, 221 (1987).
11. O. Scherzer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1698233 20, 20 (1949).
12. H. Ichinose, Proceedings of the International Kunming Symposium on Microscopy, Kunming, China, 2000 (unpublished), p. 11.
13. E. Takuma, H. Ichinose, and F. R. Chen, J. Electron Microsc. JELJA7 0022-0744 51, 297 (2002).
14. P. Schlossmacher, A. Thesen, and G. Benner, Eur. Semicond. 27, 2 (2005).
15. P. Schiske, Proceedings of the Fourth European Conference on Electron Microscopy, Rome, 1968 (unpublished), p. 145.
16. D. Van Dyck and M. Op de Beeck, Proceedings of the 12th Congress on Electron Microscopy, Seattle, 1990 (unpublished), Vol. 1, p. 26.
17. D. Van Dyck and D. M. Op de Beeck, Ultramicroscopy ULTRD6 0304-3991 10.1016/0304-3991(96)00008-3 64, 99 (1996).
18. F. H. Li and H. F. Fan, Acta Phys. Sin. WLHPAR 1000-3290 28, 267 (1979).
19. F. S. Han, H. F. Fan, and F. H. Li, Acta Crystallogr., Sect. A: Found. Crystallogr. ACACEQ 0108-7673 42, 353 (1986).
20. J. J. Hu and F. H. Li, Ultramicroscopy ULTRD6 0304-3991 35, 339 (1991).
21. F. H. Li and D. Tang, Acta Crystallogr., Sect. A: Found. Crystallogr. ACACEQ 0108-7673 41, 376 (1985).
22. H. F. Fan, Z. Y. Zhong, C. D. Zheng, and F. H. Li, Acta Crystallogr., Sect. A: Found. Crystallogr. ACACEQ 0108-7673 41, 163 (1985).
23. H. F. Fan, S. B. Xiong, F. H. Li, Q. Pan, N. Uyeda, and Y. Fujiyoshi, Ultramicroscopy ULTRD6 0304-3991 10.1016/0304-3991(91)90127-R 36, 361 (1991).
24. J. J. Hu, F. H. Li, and H. F. Fan, Ultramicroscopy ULTRD6 0304-3991 41, 387 (1992).
25. Z. Q. Fu, D. X. Huang, F. H. Li, J. Q. Li, Z. X. Zhao, T. Z. Cheng, and H. F. Fan, Ultramicroscopy ULTRD6 0304-3991 54, 229 (1994).
26. B. Lu, F. H. Li, Z. H. Wan, H. F. Fan, and Z. Q. Mao, Ultramicroscopy ULTRD6 0304-3991 70, 13 (1997).
27. J. Liu, F. H. Li, Z. H. Wan, H. F. Fan, X. J. Wu, T. Tamura, and K. Tanabe, Mater. Trans., JIM MTJIEY 0916-1821 39, 920 (1998).
28. H. Jiang, F. H. Li, and Z. Q. Mao, Micron MCONEN 0968-4328 30, 417 (1999).
29. J. Liu, F. H. Li, Z. H. Wan, H. F. Fan, X. J. Wu, T. Tamura, and K. Tanabe, Acta Crystallogr., Sect. A: Found. Crystallogr. ACACEQ 0108-7673 57, 540 (2001).
30. H. B. Wang, H. Jiang, F. H. Li, G. C. Che, and D. Tang, Acta Crystallogr., Sect. A: Found. Crystallogr. ACACEQ 0108-7673 58, 494 (2002).
31. S. X. Yang and F. H. Li, Ultramicroscopy ULTRD6 0304-3991 85, 51 (2000).
32. W. Z. He, F. H. Li, H. Chen, K. Kawasaki, and T. Oikawa, Ultramicroscopy ULTRD6 0304-3991 70, 1 (1997).
33. F. H. Li, D. Wang, W. Z. He, and H. Jiang, J. Electron Microsc. JELJA7 0022-0744 49, 17 (2000).
34. C. Y. Tang and F. H. Li, J. Electron Microsc. JELJA7 0022-0744 54, 445 (2005).
35. D. Wang, F. H. Li, and J. Zou, Ultramicroscopy ULTRD6 0304-3991 85, 131 (2000).
36. D. Wang, H. Chen, F. H. Li, K. Kawasaki, and T. Oikawa, Ultramicroscopy ULTRD6 0304-3991 93, 139 (2002).
37. D. Wang, J. Zou, W. Z. He, H. Chen, F. H. Li, K. Kawasaki, and T. Oikawa, Ultramicroscopy ULTRD6 0304-3991 98, 259 (2004).
38. F. Thon, Electron Microscopy in Materials Science (Academic, New York, 1971).
39. P. Pirouz and J. W. Yang, Ultramicroscopy ULTRD6 0304-3991 10.1016/0304-3991(93)90146-O 51, 189 (1993).
40. P. Pirouz, Solid State Phys. SSPHAE 0081-1947 56, 107 (1997).
41. J. Zou and D. J. H. Cockayne, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.354860 74, 925 (1993).
42. A. T. Blumenau, C. J. Fall, R. Jones, S. Öberg, T. Frauenheim, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.174108 68, 174108 (2003).
43. D. B. Holt, J. Phys. Chem. Solids JPCSAW 0022-3697 10.1016/0022-3697(64) 90053-8 25, 1385 (1964).