Heteroepitaxial growth of single 3C-SiC thin films on Si (100) substrates using a single-source precursor of hexamethyldisilane by APCVD

Bulletin of the Korean Chemical Society

Volumn 28, Issue 4, 2007, Pages 533-537

  Chung, Gwiy Sang ^a   Kim, Kang San ^a  

^a University of Ulsan   (South Korea)

Author keywords

Chemical vapor deposition (CVD); Cubic silicon carbide (3C SiC); Heteroepitaxial growth; Hexamethyldisilane (HMDS, Si2(CH3)6)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MEMS; NEMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CUBIC SILICON CARBIDE (3C-SIC); HEXAMETHYLDISILANE (HMDS); MIRROR LIKE CRYSTALLINE SURFACE;

THIN FILMS;

EID: 34247562663     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2007.28.4.533     Document Type: Article

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