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Volumn 252, Issue 6, 2006, Pages 2346-2354

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

(4) Zhu, W L a Zhu, J L a Nishino, S a Pezzotti, G a

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

3C SiC; CVD; Raman spectroscopy; Stress evaluation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ELASTICITY; LASERS; RAMAN SPECTROSCOPY; SILICON CARBIDE;

3C-SIC; ELASTIC DEFORMATION; STRESS EVALUATION;

RESIDUAL STRESSES;

EID: 30344459724 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.04.020 Document Type: Article

Times cited : (44)

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